SILICON GERMANIUM TRANSISTOR FULL
With the rapid advancement of epitaxial-layer pseudomorphic SiGe deposition processes, epitaxial-base SiGe heterojunction bipolar transistors have been integrated with mainstream advanced CMOS development for wide market acceptance, providing the advantages of SiGe technology for analog and RF circuitry while maintaining the full utilization of the advanced CMOS technology base for digital logic circuitry. Significant growth in both high-frequency wired and wireless markets has introduced new opportunities where compound semiconductors have unique advantages over bulk complementary metal oxide semiconductor (CMOS) technology. The present invention relates to a bipolar transistor, and more particularly to a silicon germanium (SiGe) bipolar transistor which includes an integrated resistor element for providing electrostatic discharge (ESD) robustness in radio frequency (RF) applications. A ESD (electrostatic discharge) robust SiGe bipolar transistor is provided which comprises a substrate of a first conductivity type a doped subcollector region of a second conductivity type formed on the substrate, the doped subcollector region including an epitaxial collector region which is defined between isolation trench regions a first film comprising silicon and germanium formed on the doped subcollector region, the first film including a single crystal SiGe intrinsic base region and an extrinsic SiGe polysilicon base regions of the first conductivity type abutting the intrinsic base region a second film comprising an emitter of the second conductivity type contained over the intrinsic base region formed by an emitter window mask and a second region formed outside of the emitter a first doped region of the first conductivity type formed at a facet point between the intrinsic base region and one of the extrinsic base regions a second doped region of said first conductivity type contained at the outermost extrinsic base regions and a resistor formed in SiGe polysilicon base regions between said first and second doped regions.
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